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| Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr IXFH14N100Q2 VDSS = = ID25 RDS(on) = trr 300 ns 1000 V 14 A 0.90 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 30 40 14 56 14 50 2.5 20 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXFH) (TAB) G = Gate S = Source TAB = Drain Features Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages Easy to mount Space savings High power density 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 200 TJ = 25C TJ = 125C 25 1 0.90 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved DS99073(08/03) IXFH14N100Q2 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 14 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 100 12 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External), 10 28 12 83 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 20 40 0.25 TO-247 0.25 S 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 56 1.5 300 A A V ns C A Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 0.8 7 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH14N100Q2 Fig. 1. Output Characteristics @ 25 Deg. C 1 4 1 2 1 0 VGS = 10V 27 24 VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25 deg. C 7V 21 I D - Amperes 8 6 4 2 5V 0 0 2 4 6 8 1 0 1 2 1 4 6V I D - Amperes 1 8 1 5 1 2 9 6 3 0 7V 6V 5V 0 5 1 0 1 5 20 25 30 V DS - Volts V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 1 4 1 2 1 0 8 6 4 5V 2 0 0 5 1 0 1 5 20 25 30 VG S = 10V 7V 2.8 2.5 Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature VG S = 10V 6V R D S (on) - Normalized 2.2 1 .9 1 .6 1 .3 1 0.7 0.4 -50 -25 0 25 50 75 1 00 1 25 1 50 I D = 7A I D = 14A I D - Amperes V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID25 Value vs. ID 2.8 2.5 VG S = 10V T J = 125 C 1 6 1 4 1 2 Fig. 6. Drain Current vs. Case Temperature R D S (on) - Normalized 2.2 1 .9 1 .6 1 .3 1 0.7 0 3 6 9 1 2 1 5 I D - Amperes T J = 25 C 1 0 8 6 4 2 0 1 8 21 24 27 -50 -25 0 25 50 75 1 00 1 25 1 50 I D - Amperes (c) 2003 IXYS All rights reserved TC - Degrees Centigrade IXFH14N100Q2 Fig. 7. Input Admittance 21 1 8 1 5 1 2 9 T J = 120 C 6 3 0 4 4.5 5 5.5 6 6.5 7 25 C -40 C 4 0 28 24 20 1 6 1 2 8 Fig. 8. Transconductance T J = -40 C 25 C 125 C I D - Amperes g f s - Siemens 0 3 6 9 1 2 1 5 1 8 21 24 V GS - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 42 35 1 0 Fig. 10. Gate Charge VD S = 500V I D = 7A I G = 10mA 8 I S - Amperes 28 VG S - Volts TJ = 25 C 0.9 1 .1 1 .3 6 21 TJ = 125 C 1 4 7 0 0.3 0.5 0.7 4 2 0 0 1 0 20 30 40 50 60 70 80 90 V SD - Volts Q G - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz C iss 1 Fig. 12. Maximum Transient Thermal Resistance Capacitance - pF 1 000 C oss R (th) J C - (C/W) 35 40 0.1 1 00 C rss 1 0 0 5 1 0 1 5 20 25 30 0.01 1 1 0 1 00 1 000 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Pulse Width - milliseconds 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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